QM3016D PDF Datasheet – N-Ch, 30V, 96A, MOSFET – UBIQ

Part Number: QM3016D

Function: N-Ch, 30V, Fast Switching MOSFET

Package: TO-252 Type

Manufacturer: UBIQ

Images:QM3016D pinout pdf

Description

The QM3016D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features

1. Advanced high cell density Trench technology

2. Super Low Gate Charge

3. Excellent CdV/dt effect decline

4. 100% EAS Guaranteed

5. Green Device Available

QM3016D datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 96 A

4. Allowable Power Dissipation: Pd = 62.5 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applications

1. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA

2. Networking DC-DC Power System

3. Load Switch

 

QM3016D PDF Datasheet