RJH60F7ADPK PDF Datasheet – 600V, 90A, N-Ch, IGBT

Part Number: RJH60F7ADPK

Function: 600V, 90A, Silicon N Channel IGBT

Package: TO-3P Type

Manufacturer: Renesas Technology

Images:RJH60F7ADPK pinout pdf


RJH60F7ADPK is 600V, 90A, Silicon N Channel IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.



• High speed switching

• Low on-state voltage

• Fast recovery diode

RJH60F7ADPK igbt datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 90 A

4. Collector dissipation : Pc = 328.9 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


1. High Speed Power Switching

RJH60F7ADPK PDF Datasheet