RJP63F3DPP-M0 PDF Datasheet – 630V, N-Channel IGBT

Part Number: RJP63F3DPP-M0

Function: 630V, 40A, N-Channel IGBT

Package: TO-220FL Type

Manufacturer: Renesas


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RJP63F3DPP-M0 image


This is 630V, Silicon N Channel IGBT.


1. High Speed Power Switching


1. Trench gate and thin wafer technology (G6H series)

2. Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ

3. High speed switching tf = 100 ns typ

4. Low leak current ICES = 1 μA max

5. Isolated package TO-220FL

Package code :

PRSS0003AF-A) (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E

Absolute Maximum Ratings (Ta = 25°C) :

Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tc = 25°C Symbol VCES VGES IC ic(peak) Note1 PC Note2 θj-c Tj Tstg Ratings 630 ±30 40 200 30 4.17 150 –55 to +150 Unit V V A A W °C/ W °C °C R07DS0321EJ0200 Rev.2.00 May 26, 2011 Page 1 of 6 RJP63F3DPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Min 2.5 Typ

Notes: 3. Pulse test. R07DS0321EJ0200 Rev.2.00 May 26, 2011 Page 2 of 6 RJP63F3DPP-M0 Preliminary Main Characteristics Maximum Safe Operation Area 1000 100 10 PW Typical Output Characteristics (1) Pulse Test Ta 4 6 8 10 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector […]

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RJP63F3DPP-M0 Datasheet