Part Number: SD411
Function: N-Channel Enhancement Mode Dual DMOS FET
Package: TO-78 Hermetic Type
The SD411 is constructed utilizing Calogic’s high speed lateral DMOS techniques featuring tight matching characteristics between each FET. This device is an excellent choice for instrumentation, communication, RF and Video designs.
An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.
In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.
One of the key advantages of an N-channel enhancement mode MOSFET is its ability to operate with very low voltage and power levels, which makes it well-suited for use in battery-powered devices. It also has a high input impedance, which makes it compatible with digital logic circuits and other low-power devices.
• Normally “OFF” Configuration
• High Speed Switching. . . . . . . . . . under 1 ns (typically)
• Ultra Low Capacitance . . . . . . . . . ciss <3.5 pf (typically)
• Tight Matching Characteristics
• Pin Compatible to Industry Standard Dual JFETs with Addition of Substrate Bias Pin
• Wideband Differential Amplifiers
• Cascode Amplifiers
• High Intercept Point Balanced Mixers
• High Speed Analog Comparators