This is one of the types of MOSFETs and is a kind of transistor.
A1SHB is -20V, P-Channel MOSFET.
Part Number: HM2301B, Si2301DS
Marking : A1SHB
Function : P-Channel Trench Power MOSFET
Package: SOT-23 Type
Manufacturer: H&M Semiconductor, Vishay
Image
Description
The A1SHB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
This is a power MOSFET transistor commonly used in power electronic circuits and switching applications. It is designed to handle high voltage and high current applications, and is typically used in high power motor control, power supplies, and other high voltage applications.
A1SHB Pinout
Features
1. VDS = -20V, ID =-2.5A
(1) RDS(ON) < 160mΩ @ VGS =-4.5V
(2) RDS(ON) < 230mΩ @ VGS =-2.5V
2. High Power and current handing capability
3. Lead free product is acquired
4. Surface Mount Package
Application
1. Battery protection
2. Load switch
3. Power management
Maximum ratings
1. Drain-Source Voltage : VDS = -20
2. Gate-Source Voltage : VGS = ±8V
3. Continuous Drain Current : ID = -2.3
4. Maximum Power Dissipation : PD = 0.35 W
A1SHB Datasheet
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