C1815 Datasheet – 50V, 150mA, NPN Transistor, 2SC1815

This is a kind of NPN Transistor. It is is a type of bipolar junction transistor (BJT) that consists of two n-type semiconductor materials separated by a single p-type material.

Part Number: C1815, 2SC1815

Function: 50V, 150mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba Semiconductor

C1815 image


This is 50V, 150mA, Silicon NPN Epitaxail Type Transistor. C1815 transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.



1.  High voltage and high current: VCEO= 50 V (min), IC= 150 mA (max)

2.  Excellent hFElinearity :

(1) hFE (2)= 100 (typ.)  at VCE= 6 V, IC= 150 mA

(2) hFE(IC= 0.1 mA)/hFE(IC= 2 mA)  = 0.95 (typ.)

3.  Low noise: NF = 1dB (typ.) at f = 1 kHz

4.  Complementary to 2SA1015 (O, Y, GR class)


C1815 Datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 150 mA

5. Total Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 125°C

7. Storage Temperature: Tsg = -55 ~ +150°C



1. Audio Frequency General Purpose Amplifier

2. Driver Stage Amplifier

C1815 Datasheet


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