Part Number: C3021
Function: 17V, 2A, RF Power NPN Transistor
Package: T-31E Type
Manufacturer: MITSUBISHI ELECTRIC
Image and Pinouts:
This is RF Power NPN Epitaxial Planar Type Transistor.
The C3021 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifier applications.
1. High power gain : Gpe > 7.6 dB @ Vcc = 12.5V, f = 520 Mhz, Pin = 1.2 W
2. Emitter ballasted construction
3. Flange type ceramic package
Absolute maximum ratings
1. Collector to base voltage : Vcbo = 35 V
2. Emitter to base voltage : Vebo = 4 V
3. Collector to emitter voltage : Vceo = 17 V
4. Collector current : Ic = 2A
5. Collector dissipation : Pc = 20 W
For output stage of 5W power amplifier and drive stage of higher power amplifier in UHF band.
Other data sheets are available within the file: 2SC3021