C5339 Datasheet – Vcbo=1500V, 7A, NPN Transistor ( PDF )

This post explains for the transistor C5339.

The Part Number is 2SC5339.

The function of this semiconductor is 600V, 7A, NPN Transistor.

The package is TO-3P Type

Manufacturer: Toshiba Semiconductor

Preview images :

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C5339 pdf pinout


C5339 is 600V, 7A, NPN transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.


1. Low Saturation Voltage : VCE (sat) = 5 V (Max.)

2. High Speed : tf = 0.2 μs (Typ.)

3. Bult−in Damper Type

4. Collector Metal (Fin) is Fully Covered with Mold Resin […]

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C5339 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 7 A

5. Collector Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C5339 PDF Datasheet