IRC4BC40F PDF Datasheet – 600V, Fast Speed IGBT – IR

This post explains for the IGBT.

The Part Number is IRC4BC40F.

The function of this semiconductor is 600V, Insulated-Gate Bipolar Transistor.

The package is TO-220AB Type

Manufacturer: International Rectifier

Preview images :

1 page
IRC4BC40F pinout pdf

Description

IRC4BC40F is 600V, 49A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

Features

1. Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3

3. Industry standard TO-220AB package

Benefits :

1. Generation 4 IGBTs offer highest efficiency available

2. IGBTs optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

IRC4BC40F datasheet igbt

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 49 A (Tc = 25°C)

4. Maximum Power Dissipation: Pd = 160 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

[…]

 

IRC4BC40F PDF Datasheet

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IRFZ44N Datasheet – 55V, Power MOSFET – IR ( PDF )

This post explains for the MOSFET.

Metal Oxide Semiconductor Field Effect Transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Part Number: IRFZ44N

Functions: HEXFET Power MOSFET ( Vdss = 55V, Rds(on) = 17.5m Ohm, Id = 49A )

Package: TO-220AB

Manufacturer: International Rectifier

Image

IRFZ44N image

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

IRFZ44N Pinout

IRFZ44N pinout

 

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

 

Electrical Characteristics

IRFZ44N datasheet

IRFZ44N Datasheet

 

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