IRL540N Datasheet – 100V, 36A, HEXFET MOSFET

IRL540N is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in electronic circuits as a switch or amplifier.

Function: 100V, 36A, HEXFET MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

For additional details, please refer to the preview image and the accompanying PDF file.

Images

IRL540N pinout datasheet

What is IRL540N?

It is designed to handle high currents and voltages, making it suitable for a wide range of applications. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

1. Maximum voltage rating of 100 volts
2. Maximum current rating of 36 amps
3. Low on-resistance (Rds(on))
4. Fast switching speed
5. High input impedance

Advantages

It is high current and voltage handling capabilities, which make it suitable for use in high-power circuits. Its fast switching speed also makes it ideal for use in circuits that require fast switching times.

Disadvantages

Its high input impedance can make it susceptible to electrostatic discharge (ESD) damage, and its sensitivity to voltage spikes and surges may require additional protective measures in some circuits.

Absolute maximum ratings ( Ta=25°C )

1. Drain to source Voltage: VDSS = 100 V

2. Gate to source Voltage: VGSS = ± 16 V

3. Drain current: ID = 36 A

4. Power Dissipation: Pd = 140 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: IRL540

IRL540N Datasheet PDF

IRL540N pdf

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IRG4BC30KD Datasheet – 600V, 16A, Ultra Fast IGBT – IR

What is IRG4BC30KD?

This is a high-speed insulated gate bipolar transistor (IGBT) designed for use in high-power switching applications. It has a voltage rating of 600V and a current rating of 16A.

Function: 600V, 16A, IGBT

Package: TO-220AB Type

Manufacturer:
International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

Image:

IRG4BC30KD datasheet pinout

Description

This is 600V, 16A, IGBT With Ultrafast Soft Recovery Diode. It is housed in a TO-220AB package, which provides good thermal dissipation and makes it easy to mount on a heatsink. It is commonly used in applications such as motor control circuits, power supplies, and welding equipment.

Benefits

1. Latest generation 4 IGBTs offer highest power density motor controls possible

2. HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI andswitching losses

3. This part replaces the IRGBC30KD2 and IRGBC30MD2 products

Pinout

G4BC30KD datasheet pinout

 

Features

1. High short circuit rating optimized for motor control, tsc=10µs, @360V VCE(start), TJ= 125°C,VGE= 15V

2. Combines low conduction losses with high switching speed

3. Tighter parameter distribution and higher efficiency than previous generations

4 IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 16 A (Tc = 100°C)

4. Collector dissipation : Pc = 100 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

IRG4BC30KD Datasheet PDF

 

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