Part Number: GB6B60KD, IRGB6B60KD

Function: 600V, 13A, IGBT, Transistor

Package: TO-220AB Type

Manufacturer: International Rectifier

Image:

Description

GB6B60KD is 600V, 13A, N-Channel IGBT. The IGBT is insulated-gate bipolar transistor.

Benefits:

• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation

Pinout

Features

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 13 A

4. Maximum Power Dissipation: Pd = 90 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file:

IRGB6B60KDPBF, GS6B60KD, GSL6B60KD,  IRGS6B60KD

GB6B60KD Datasheet PDF Download

This post explains for the IGBT.

The Part Number is IRC4BC40F.

The function of this semiconductor is 600V, Insulated-Gate Bipolar Transistor.

The package is TO-220AB Type

Manufacturer: International Rectifier

Preview images :

1 page

Description

IRC4BC40F is 600V, 49A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

Features

1. Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3

3. Industry standard TO-220AB package

Benefits :

1. Generation 4 IGBTs offer highest efficiency available

2. IGBTs optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 49 A (Tc = 25°C)

4. Maximum Power Dissipation: Pd = 160 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

[…]

 

IRC4BC40F PDF Datasheet

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