The FDC6506P is a P-channel PowerTrench MOSFET produced by Fairchild Semiconductor, which is now a part of ON Semiconductor. This MOSFET is designed for use in various power management applications due to its low on-resistance and high current-handling capabilities.
Function: Dual P-Channel Logic Level PowerTrench MOSFET
Package: SuperSOT-6 Type
Manufacturer: ON Semiconductor
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Description
These P-Channel logic level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
1. Drain-Source Voltage (VDS): Typically around -30V (negative voltage, indicating it’s a P-channel MOSFET). This is the maximum voltage that can be applied between the drain and source terminals.
2. Gate-Source Voltage (VGS): Typically around ±20V (Volts). This is the maximum voltage that can be applied between the gate and source terminals.
Features
• -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V
• Low gate charge (2.3nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Pinouts
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = – 30 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = -1.8 A
4. Drain power dissipation : PD = 0.96 W
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -55 to +150 °C
Applications
1. Load switch
2. Battery protection
3. Power management
FDC6506P Datasheet PDF
