FDC6506P Datasheet – Dual P-Channel MOSFET

The FDC6506P is a P-channel PowerTrench MOSFET produced by Fairchild Semiconductor, which is now a part of ON Semiconductor. This MOSFET is designed for use in various power management applications due to its low on-resistance and high current-handling capabilities.

Function: Dual P-Channel Logic Level PowerTrench MOSFET

Package: SuperSOT-6 Type

Manufacturer: ON Semiconductor


FDC6506P datasheet pdf


These P-Channel logic level MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

1. Drain-Source Voltage (VDS): Typically around -30V (negative voltage, indicating it’s a P-channel MOSFET). This is the maximum voltage that can be applied between the drain and source terminals.

2. Gate-Source Voltage (VGS): Typically around ±20V (Volts). This is the maximum voltage that can be applied between the gate and source terminals.


• -1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V

• Low gate charge (2.3nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).



FDC6506P pinout


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = – 30 V

2. Gate to source voltage : VGSS = ± 20 V

3. Drain current : ID = -1.8 A

4. Drain power dissipation : PD = 0.96 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C


1. Load switch

2. Battery protection

3. Power management

FDC6506P Datasheet PDF