This is one of the types of MOSFETs and is a kind of transistor.
Part Number: IRF1010, IRF1010E
Function: 60V, 84A, MOSFET (Transistor)
Package: TO-220AB Type
Manufacturer: IRF, Nell Semiconductor
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Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Drain to Gate voltage : VDGR = 60 V
3. Gate to Source voltage : VGS = ± 20 V
4. Drain current: ID = 84 A
5. Drain power dissipation : PD = 140 W
6. Single pulse avalanche energy : Eas = 99 mJ
7. Avalanche curren : Iar = 51 A
8. Channel temperature: Tch = 175 °C
9. Storage temperature: Tstg = -55 to +175 °C
IRF1010 Datasheet
