K11A65D PDF – 650V, 11A, MOSFET (TK11A65D)

Part Number: K11A65D, TK11A65D

Function: 650V, 11A, N-ch, MOSFET, Transistor

Package: TO-220SIS

Manufacturer: Toshiba Semiconductor


TK11A65D pinout datasheet


1. N-Channel: The N-channel MOSFET has an N-type semiconductor channel between the source and drain terminals. When a positive voltage is applied to the gate terminal, it creates an electric field that controls the flow of current through the channel.

2. Enhancement Mode: Most N-channel MOSFETs operate in enhancement mode, which means the device requires a positive voltage at the gate to enable the channel and allow current flow between the source and drain terminals.

3. Voltage Ratings: Silicon N-channel MOSFETs are available in various voltage ratings, ranging from low-voltage devices (e.g., a few volts) to high-voltage devices (e.g., hundreds of volts). The voltage rating determines the maximum voltage the device can handle without breakdown.

4. Current Handling: MOSFETs have different current ratings, specifying the maximum continuous drain current they can handle without causing damage. These ratings vary based on the specific device model and package.

5. Gate Voltage: The gate terminal of an N-channel MOSFET requires a positive voltage (typically referenced to the source terminal) to control the flow of current through the channel. Applying a higher gate voltage increases the conductivity of the channel, allowing more current to flow.


(1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.)

(2) High forward transfer admittance: |Yfs| = 7.5 S (typ.)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)

(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA). […]

TK11A65D pdf


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 650 V

2. Gate to source Voltage: VGSS = ± 30 V

3. Drain current: ID = 11 A

4. Drain Power Dissipation: Pd = 45 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K11A65D PDF Datasheet