K12A60D Datasheet – 600V, 12A, N-Ch, MOSFET – TK12A60D

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K12A60D, TK12A60D

Function: 600V, 12A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba



This is 600V, 12A, Silicon N Channel MOS Type Field Effect Transistor.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.


1. Low drain-source ON resistance: RDS (ON)= 0.45 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 7.5 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4. Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)


K12A60D datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 600 V
2. Gate to source Voltage: VGSS = ± V
3. Drain current: ID = 12 A
4. Drain Power Dissipation: Pd = 45 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C


1. Switching Regulator

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K12A60D Datasheet


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