The K3265 is one of the MOSFET types.
The Full Part Number is 2SK3265.
This product has 700V, Silicon N Channel MOSFET functions.
The package is TO-220 Type
The manufacturers of this product is Toshiba.
See the preview image and the PDF file for more information.
Preview images :
This is 700V, 10A, Silicon N Channel MOS Type Field Effect Transistor.
1. Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 7.0 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 700 V)
4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain−source voltage: VDSS = 700 V
2. Drain−gate voltage (RGS = 20 kΩ): VDGR = 700 V
3. Gate−source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc=25°C): PD = 45 W
5. Single pulse avalanche energy (Note 2) : EAS = 420 mJ
6. Avalanche current : IAR = 10 A
7. Repetitive avalanche energy (Note 3) : EAR = 4.5 mJ
8. Channel temperature: Tch = 150 °C
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