NJW21194G is a high-speed, high-current, NPN bipolar junction transistor (BJT) designed for use in audio amplifier applications.
Function: 16A, 250V, 200W, NPN Power Transistor
Package: TO-3P Type
Manufacturer: ON Semiconductors
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Description
The NJW21193G and NJW21194G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant
Pinouts
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 250 V
2. Collector to Emitter Voltage: Vceo = 400 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 16 A
5. Total Dissipation: Pd = 200 W
6. Junction Temperature: Tj = -65 ~ +150°C150°C
7. Storage Temperatue: Tsg = -65 ~ +150°C
Applications
1. Audio amplifier circuits, including high-fidelity audio amplifiers
2. Professional audio equipment, power amplifiers for speakers
Other data sheets within the file : PNP Type ( NJW21193G )