Search 06N02C Datasheet (PDF)

VBsemi
06N02 CMU06N02N-VB
N, 30V, 100A, Rds(on), 3.5M¦¸@10V, 4.5M¦¸@4.5V, 20VGS(¡ÀV), 1.76VTH(V), TO251 Nmosfet
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[ Descriptions ]

06N02C FNK - N-Channel Enhancement Mode Power MOSFET

FNK06N02C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.5V ● High Power and current handing capability ● Lead free product is acquired Schematic diagram Application ●Battery Switch ●


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06N02C N-Channel Enhancement Mode Power MOSFET - FNK

FNK06N02C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.5V ● High Power and current handin
06N03 25V N-Channel Enhancement Mode MOSFET - Pan Jit International

PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES RDS(ON), VGS@10V,IDS@30A=6mΩ RDS(ON), VGS@4.5V,IDS@30A=9mΩ Advanced trench process technology High Density Cell Design For Uitra Low On-Resistance Specially Designed for DC, DC Converters and Motor Drivers Fully Characterized



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