Semiconductor Informations

File Download: 06N03LA.PDF
| 06N03LA Infineon Technologies Corporation - IPB06N03LA IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv , dt rated P-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 25 5.9 50 V mΩ A P-TO262-3-1 P-TO2 |
| 06N02C N-Channel Enhancement Mode Power MOSFET - FNK FNK06N02C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.5V ● High Power and current handin |
| 06N03 25V N-Channel Enhancement Mode MOSFET - Pan Jit International PJD06N03 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES RDS(ON), VGS@10V,IDS@30A=6mΩ RDS(ON), VGS@4.5V,IDS@30A=9mΩ Advanced trench process technology High Density Cell Design For Uitra Low On-Resistance Specially Designed for DC, DC Converters and Motor Drivers Fully Characterized |