Search 07N60C2 Datasheet (PDF)

VBsemi
SPA07N60C2-VB
TSMC wafer, JCET (Jiangsu Changjiang Electronics Technology)。NChannel, 650V, 12A, RDS(ON), 680mΩ@10V, 30Vgs(±V),...
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[ Descriptions ]

07N60C2 Infineon Technologies - SPA07N60C2

Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.6 7.3 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP07N60C2 SPB07N60C2 SPA07N60C2 Pac


Related Information

07N03LBG IPP07N03LBG - Infineon

IPP07N03LB G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC1) for target application N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operat
07N60C2 SPA07N60C2 - Infineon Technologies

Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-



Related Part Number

07N60C3 | 07N60S5 |

07N65C3 | 07104GOA |

070XZ01Z | 07N60C3 |

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