Semiconductor Informations

File Download: 07N60C3.PDF
| 07N60C3 Infineon - Power Transistor SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Ω A Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 Extreme dv, dt rated 2 High peak current capability Improved transconductance P-TO220-3-31 3 12 PG-TO-220-3-31;-3-111: Fully isolated package (2500 |
| 07N03LBG IPP07N03LBG - Infineon IPP07N03LB G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC1) for target application N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operat |
| 07N60C2 SPA07N60C2 - Infineon Technologies Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263- |