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Search 07N60S5 Datasheet (PDF)
Infineon
SPP07N60S5
MOSFET N-CH 650V 7.3A TO220-3 N-Channel 650 V 7.3A (Tc) 83W (Tc) Through Hole PG-TO220-3-1
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Microchip USA | 204 | Visit Site | |||
| Component Search | 474 | Visit Site | |||
| Win Source | 7,000 | Visit Site | |||
| Worldway Electronics | 9,820 | Visit Site | |||
| ICSuperman Co. | 3,000 | 0.6767 | Visit Site | ||
| GreenTree Electronics | 1,424 | Visit Site | |||
| Esaler Electronic | 500 | 1.083 | Visit Site | ||
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File Download: 07N60S5.PDF
[ Descriptions ]
| 07N60S5 Infineon Technologies - SPI07N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) ID 600 V 0.6 Ω 7.3 A PG-TO262 PG-TO220 2 P-TO220-3-1 123 Type SPP07N60S5 SPI07N60S5 Package PG-TO220 PG-TO262 |
Related Information
| 07N03LBG IPP07N03LBG - Infineon IPP07N03LB G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC1) for target application N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operat |
| 07N60C2 SPA07N60C2 - Infineon Technologies Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263- |
Related Part Number
07N60C3 | 07N60C2 |07N65C3 | 07104GOA |
070XZ01Z | 07N60C3 |