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HGTG10N120BND
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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[ Descriptions ]
| 10N120BND Fairchild Semiconductor - HGTG10N120BND Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction |
Related Information
| 10N03L IPP10N03L - Infineon Technologies AG IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V mΩ A Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C opera |
| 10N120BND HGTG10N120BND - Fairchild Semiconductor Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipol |
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