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IXFN110N60P3
IXYS N-Ch Enhancement MOSFET HiperFET Polar3 Series Vds=600V 90A SOT-227 Threaded 4-Pin
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[ Descriptions ]
| 10N60Z UNISONIC TECHNOLOGIES - 10A 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 10N60Z 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UT C 10N 60Z is a hi gh voltage an d hi gh curre nt po wer MOSFET, designe d to have better c haracteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This po wer MOSFET is usually use d at high s peed s witching a ppl |
| 10N60C Fairchild Semiconductor - FQP10N60C FQP10N60C, FQPF10N60C QFET FQP10N60C, FQPF10N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th |
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| 10N120BND HGTG10N120BND - Fairchild Semiconductor Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipol |
Related Part Number
10N60C | 10TP583T |103H7126 | 1008CS-XXXXXBX |
10W310 | 10D471 |