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[ Descriptions ]
| 11N06LT NXP Semiconductors - PHB11N06LT Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 11 A g s RDS(ON) ≤ 150 mΩ (VGS = 5 V) RDS(ON) ≤ 130 mΩ (VG |
Related Information
| 11N06LT PHB11N06LT - NXP Semiconductors Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK |
| 11N120CN HGTG11N120CN - Fairchild Semiconductor HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT Features 43A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . |
Related Part Number
11N60ES | 11N60 |11N60E | 11N60S5 |
11N60 | 11N60C3 |