Semiconductor Informations
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| 11N60S5 Infineon Technologies AG - SPP11N60S5 SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor VDS RDS(on) ID P-TO262 P-TO263-3-2 600 0.38 11 V Ω A Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance P-TO220-3-1 2 1 P-TO220-3-1 23 Type Package Ordering Code SPP11N60S5 SPB11N60S5 SPI11N |
| 11N60C3 Infineon Technologies - SPP11N60C3 SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated High peak current capability Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 650 0.38 11 PG-TO220 V Ω A PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minut |
Related Information
| 11N06LT PHB11N06LT - NXP Semiconductors Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK |
| 11N120CN HGTG11N120CN - Fairchild Semiconductor HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT Features 43A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . |
Related Part Number
11N60ES | 11N60E |11N60S5 | 11N60C3 |
11NM50N | 11N60C3 |