Semiconductor Informations
Search 11N60E Datasheet (PDF)
Vishay
SIHH11N60E-T1-GE3
N-Channel 600 V 339 mOhm 31 nC SMT E Series Power Mosfet - PowerPAK 8x8
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Newark | 50 | 5.91 | Visit Site | ||
| Mouser | 2,371 | 5.39 | Visit Site | ||
| Win Source | 49 | Visit Site | |||
| UnikeyIC | 48 | Visit Site | |||
| Esaler Electronic | 3,000 | 1.41 | Visit Site | ||
| Quest | 439 | 3.36 | Visit Site | ||
| Fly-Wing Technology | 18 | 3.2224 | Visit Site | ||
Powered by Octopart | |||||
File Download: 11N60E.PDF
[ Descriptions ]
| 11N60E Fuji Electric - 600V / 11A/ N-Channel Power MOSFET |
Related Information
| 11N06LT PHB11N06LT - NXP Semiconductors Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance PHB11N06LT, PHD11N06LT SYMBOL d QUICK |
| 11N120CN HGTG11N120CN - Fairchild Semiconductor HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT Features 43A, 1200V, TC = 25oC 1200V Switching SOA Capability Typical Fall Time. . . . . . . . . . . . . |
Related Part Number
11N60ES | 11N60 |11N60S5 | 11N60 |
11N60C3 | 11NM50N |