Semiconductor Informations
| 13N03LA Infineon Technologies - IPD13N03LA IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv , dt rated 1) Product Summary V DS R DS(on),max (SMD version) ID 25 13 |
| 13N03LA IPD13N03LA - Infineon Technologies IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 � |
| 13N06L FQB13N06L - Fairchild Semiconductor FQB13N06L , FQI13N06L May 2001 QFET FQB13N06L , FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail |