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File Download: 13N50CF.PDF
[ Descriptions ]
| 13N50CF Fairchild Semiconductor - FQPF13N50CF FQPF13N50CF N-Channel QFET® FRFET® MOSFET June 2014 FQPF13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 13 A, 540 mΩ Features 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A Low Gate Charge (Typ. 43 nC) Low Crss (Typ. 20 pF) 100% Avalanche Tested Fast Recovery Body Diode (Typ. 100 ns) Description This N-Channel enhancement mode power MOSFET is produced using Fairchild S |
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| 13N03LA IPD13N03LA - Infineon Technologies IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 |
| 13N06L FQB13N06L - Fairchild Semiconductor FQB13N06L , FQI13N06L May 2001 QFET FQB13N06L , FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail |
Related Part Number
13007 | 13N06L |13N60M2 | 13003BR |
13007 | 13001S8D |