Semiconductor Informations

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| 13N60M2 STMicroelectronics - N-CHANNEL POWER MOSFET STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg 2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet production data Features 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max ID STF13N60M2 STFI13N60M2 650 V 0.38 Ω 11 A Extremely low gate charge Lower RDS(on) x area vs pre |
| 13N03LA IPD13N03LA - Infineon Technologies IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 |
| 13N06L FQB13N06L - Fairchild Semiconductor FQB13N06L , FQI13N06L May 2001 QFET FQB13N06L , FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail |