Semiconductor Informations
| 15N60C3 Infineon - SPP15N60C3 SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID Periodic avalanche rated PG-TO220FP PG-TO262 Extreme dv, dt rated Ultra low effective capacitances Improved transconductance P-TO220-3-31 3 12 PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.28 Ω |
| 15N03H AP15N03H - Advanced Power Electronics AP15N03H, J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 80mΩ 15A ▼ Fast Switching G S Description The TO-252 package is universally preferred for all commercialindustrial surface mount app |
| 15N03L IPP15N03L - Infineon Technologies AG IPP15N03L IPB15N03L OptiMOS® Buck converter series Feature N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V mΩ A Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C oper |