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1N4448 Rectron Semiconductor - SIGNAL DIODE

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4448 1N4448 SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW, °C (25°C) Forward Current IF 500 mA Junction Temp. Tj -65 to 175 °C Storage Temp. Tstg -65 to 175 °C Mechanical Data Items Package Case Lead, Finish Chip Materials DO-35

1N4448 Semtech Corporation - SILICON EPITAXIAL PLANAR DIODE

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