Search 1N5550 Datasheet (PDF)

Microchip
1N5550
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon
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[ Descriptions ]


1N5550 General Semiconductor - GLASS PASSIVATED JUNCTION RECTIFIER

1N5550 THRU 1N5552 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts D * Forward Current - 3.0 Amperes FEATURES P A T E N T Case Style G4 0.180 (4.6) 0.115 (2.9) DIA. 1.0 (25.4) MIN. 0.300 (7.6) MAX. Glass passivated cavity-free junction High temperature metallurgically bonded construction Hermetically sealed package Capable of meeting environmental standards of
1N5550 Sensitron - HIGH CURRENT AXIAL LEAD RECTIFIERS

SENSITRON _____ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV E 1N5550, US 1N5551, US 1N5552, US 1N5553, US 1N5554, US JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf, surface mount packaging MAX. RATINGS , ELECTRICAL CHARACTERISTICS RATING Peak Inverse Voltage (PIV) 1N5550 1N5551 1N5552 1N555


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1N50 Diode ( Rectifier ) - American Microsemiconductor


1N50 GOLD BONDED GERMANIUM DIODES - New Jersey Semiconductor






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