Semiconductor Informations

File Download: 1N5615.PDF
| 1N5615 General Semiconductor - GLASS PASSIVATED FAST SWITCHING RECTIFIER 1N5615 THRU 1N5623 GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 200 to 1000 Volts DO-204AP Forward Current - 1.0 Ampere FEATURES 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. High temperature metallurgically bonded construction Hermetically sealed case Glass passivated cavity-free junction 1.0 Ampere operation at TA=55°C with |
| 1N5615GP General Semiconductor - GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER 1N5615GP THRU 1N5623GP GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse Voltage - 200 to 1000 Volts D * DO-204AC Forward Current - 1.0 Ampere FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature metallurgically bonded construction Glass passivated cavity-free junction Capable of meeting environmental standards of MIL-S-19500 Fast s |
| 1N50 Diode ( Rectifier ) - American Microsemiconductor |
| 1N50 GOLD BONDED GERMANIUM DIODES - New Jersey Semiconductor |