Semiconductor Informations
File Download: 1N5621GP.PDF
1N5621GP General Semiconductor - GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER 1N5615GP THRU 1N5623GP GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Reverse Voltage - 200 to 1000 Volts D * DO-204AC Forward Current - 1.0 Ampere FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature metallurgically bonded construction Glass passivated cavity-free junction Capable of meeting environmental standards of MIL-S-19500 Fast s |
1N5621GP Vishay - Glass Passivated Junction Fast Switching Rectifier 1N5615GP thru 1N5623GP Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier ® Patented* * Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 DO-204AC (DO-15) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr IR VF Tj max. 1.0 A 200 V to 1000 V 50 A 150 ns, 250 ns, 300 ns, 500 ns 0.5 A 1.2 V 175 ° |
1N50 Diode ( Rectifier ) - American Microsemiconductor |
1N50 GOLD BONDED GERMANIUM DIODES - New Jersey Semiconductor |