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Search 1N5819 Datasheet (PDF)
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1N5819G
Diode, Schottky Barrier, Vr 40V, If 1A, Pkg Case 59-10, Vf 0.6V, Tj +125DEGC, Cs 25A
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| Avnet | 116,940 | 0.06575 | Visit Site | ||
| Newark | 4,401 | 0.74 | Visit Site | ||
| Master Electronics | 4,000 | Visit Site | |||
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| Mouser | 14,830 | 0.69 | Visit Site | ||
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File Download: 1N5819.PDF
[ Descriptions ]
| 1N5819 Compensated Deuices Incorporated - 1 AMP SCHOTTKY BARRIER RECTIFIERS 1N5819-1 AND 1N6761-1AVAILABLE IN JAN,JANTX, JANTXV, AND JANS PER MIL-PRF-19500, 586 1 AMP SCHOTTKY BARRIER RECTIFIERS HERMETICALLY SEALED METALLURGICALLY BONDED 1N5819 and DSB5817 and DSB5818 and 1N6759 thru 1N6761 and DSB1A20 thru DSB1A100 MAXIMUM RATINGS Operating Temperature: -55°C to +125°C Storage Temperature: -55°C to +150°C Average Rectified Forward Current: 1.0 AMP @TL +55°C, L |
| 1N5819 NXP Semiconductors - Schottky barrier diodes DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product speci cation Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product speci cation Schottky barrier diodes FEATURES Low switching losses Fast recovery time Guard ring protected Hermetically sealed leaded glass package. APPLICATIONS Low power, switched-mode power suppli |
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