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Search 1SS184 Datasheet (PDF)
Toshiba
1SS184,LF
Rectifier Diode Switching Si 85V 0.1A 4ns Automotive AEC-Q101 3-Pin S-Mini T/R
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|---|---|---|---|---|---|
| Mouser | 59,101 | 0.24 | Visit Site | ||
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| Component Stockers USA | 31,590 | 0.22 | Visit Site | ||
| Win Source | 39,999 | Visit Site | |||
| UnikeyIC | 15,000 | Visit Site | |||
| LCSC | 15,100 | Visit Site | |||
| Chipsmall Limited | 210,000 | 1.5 | Visit Site | ||
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File Download: 1SS184.PDF
[ Descriptions ]
| 1SS184 Toshiba Semiconductor - SILICON EPITAXIAL PLANAR DIODE TOSHIBA Diode Silicon Epitaxial Planar Type 1SS184 1SS184 Ultra High-Speed Switching Applications Unit: mm - Small package: SC-59 - Low forward voltage: VF (3) = 0.9 V (typ.) - Fast reverse recovery time: trr = 1.6 ns (typ.) - Small total capacitance: CT = 0.9 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage |
| 1SS184 EIC - SILICON EPITAXIAL PLANAR DIODE Certificate TH97, 10561QM Certificate TW00, 17276EM 1SS184 PRV : 85 Volts Io : 100 mA FEATURES : * Small package * Low forward voltage * Fast reverse recovery time * Small total capacitance * Ultra high speed switching application * Pb , RoHS Free SILICON EPITAXIAL PLANAR DIODE SOT-23 0.19 0.08 1.40 0.95 0.50 0.35 0.100 0.013 3.10 2.70 3 1 2 2.04 1.78 1.02 0.89 3 1.65 1.20 3.0 2.2 M |
Related Information
| 1SS104 SILICON PLANAR TYPE DIODE - Toshiba Semiconductor |
| 1SS106 SILICON SCHOTTKY BARRIER DIODE - SEMTECH 1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperatur |
Related Part Number
1S1886 | 1SMC5334 |1SS106 | 1S1886 |
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