Semiconductor Informations

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| 1SS198 Hitachi Semiconductor - Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A (Z) Rev. 1 Oct. 1998 Features Detection efficiency is very good. Small temperature coefficient. Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS198 Cathode Green Mark 2 Package Code MHD Outline 2 1 Cathode band 2 1. Cathode 2. Anode 1SS198 |
| 1SS104 SILICON PLANAR TYPE DIODE - Toshiba Semiconductor |
| 1SS106 SILICON SCHOTTKY BARRIER DIODE - SEMTECH 1SS106 SILICON SCHOTTKY BARRIER DIODE for various detector, high speed switching Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal. Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperatur |