Semiconductor Informations

File Download: 1SV237.PDF
| 1SV237 Toshiba Semiconductor - DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS) TOSHIBA Diode Silicon Epitaxial Pin Type 1SV237 VHF~UHF Band RF Attenuator Applications Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V mA °C °C 1SV237 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward volt |
| 1SV100 SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE - Toshiba Semiconductor |
| 1SV101 VARIABLE CAPACITANCE DIODE (FM TUNER APPLICATIONS) - Toshiba Semiconductor |