Semiconductor Informations
| 20N60S5 Infineon Technologies - SPP20N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv, dt rated Ultra low effective capacitances Improved transconductance SPP20N60S5 VDS RDS(on) ID 600 0.19 20 V Ω A PG-TO220 2 P-TO220-3-1 123 Type SPP20N60S5 Package PG-TO220 Ordering Code Q67040-S4751 Marking 20 |
| 20N03HL MTD20N03HL - Motorola Semiconductors MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL, D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation mode |
| 20N03L IPD20N03L - Infineon Technologies IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x R DS(on) product (FOM) Superior thermal resistance 175°C operating temperatu |
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