Search 23N50E Datasheet (PDF)

Fuji Electric
FMV23N50E
IC, Mosfet; N-channel, FAP-E3 Planar; 500V; 23A; 130W; TO-220F(SLS)

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[ Descriptions ]

23N50E Fuji Electric - FMH23N50E

FMH23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3P(Q) Equivalent circuit schem


Related Information

23N50E FMH23N50E - Fuji Electric

FMH23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv, dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI P



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