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| 28LV64A Microchip Technology - 64K (8K x 8) Low Voltage CMOS EEPROM 28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM FEATURES 2.7V to 3.6V Supply Read Access Time 300 ns CMOS Technology for Low Power Dissipation - 8 mA Active - 50 A CMOS Standby Current Byte Write Time 3 ms Data Retention >200 years High Endurance - Minimum 100,000 Erase, Write Cycles Automatic Write Operation - Internal Control Timer - Auto-Clear Before Write Operation - On-Chip Address and D |
Related Information
| 28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM - Microchip Technology 28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM FEATURES 2.7V to 3.6V Supply Read Access Time 300 ns CMOS Technology for Low Power Dissipation - 8 mA Active - 50 A CMOS Standby Current Byte Write Time 3 ms Data Retention >200 years High Endurance - Minimum 100,000 Erase, Write Cycles Automatic |
Related Part Number
28C16A | 28F256 |28BYJ-48 | 28BYJ-48 |