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Fuji
2MBI100NB-120
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
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[ Descriptions ]


2MBI100NB-120 Fuji - IGBT MODULE ( N series )

IGBT MODULE ( N series ) n Features n Outline Drawing Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic Minimized Internal Stray Inductance Overcurrent Limiting Function (4~5 Times Rated Current) n Applications High Power Switching A.C. Motor Controls D.C. Motor Controls Uninterruptible Power Supply n Maximum Ratings and Characteristics Abs


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6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT, FWD chipset · Tj(max.)=175°C, Tj(op)=150°C Environmentally friendly modules · Easy assemblage, solder free options · RoHS compliant Turn-on switching characteristics ·




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