Semiconductor Informations
| 2N03L05 Infineon Technologies - Power-Transistor OptiMOS® Power-Transistor Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv, dt rated P- TO262 -3-1 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Product Summary VDS RDS(on) ID 30 V 5.2 mΩ 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N03S2L-05 SPB80N03S2L-05 SPI80N |
| 2N03L05 Power-Transistor - Infineon Technologies OptiMOS® Power-Transistor Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv, dt rated P- TO262 -3-1 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Product Summary VDS RDS |
| 2N04H4 Power-Transistor - Infineon Technologies OptiMOS® Power-Transistor Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv, dt rated P- TO262 -3-1 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Product Summary VDS 40 V RDS(on) 4 mΩ ID 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N04S2-H4 SPB80N04S2-H4 |
Please enter the part number you wish to download in the search bar above.