Semiconductor Informations
| 2N2222A-M DSI - TRANSISTOR Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty 75.0 V 40.0 V 6.0 V 0.8 A 0.08 A 1.8 W 84.0 °C, W 200.0 °C empty empty NO. TYPE empty empty CAS |
| 2N20 N-Channel MOSFET Transistor - Inchange Semiconductor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N20 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converte |
| 2N2000 (2N2000 / 2N2001) alloy-junction germanium transistors - ETC w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |