Semiconductor Informations
Search 2N6111 Datasheet (PDF)
STMicroelectronics
2N6111
Transistor, Bipolar, Si, PNP, Medium Power, Switch, Vceo -30V, IC -7A, Pd 40W, TO-220
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Future Electronics | 65 | Visit Site | |||
| Worldway Electronics | 27,690 | Visit Site | |||
| Anlinkda | 25,730 | 1.188 | Visit Site | ||
| Best Source | 5,886 | 1.122 | Visit Site | ||
| Advanced Electronics | 4,879 | 8.25 | Visit Site | ||
| Run Hong Electronics | 2,540 | 2.6954 | Visit Site | ||
| TIST Technology Co., Limited | 943 | Visit Site | |||
Powered by Octopart | |||||
File Download: 2N6111.PDF
[ Descriptions ]
| 2N6111 STMicroelectronics - SILICON PNP SWITCHING TRANSISTORS ® 2N6111 SILICON PNP SWITCHING TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR APPLICATIONS: s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6111 is an Epitaxial-Base PNP silicon transistor in Jedec TO-220 plastic package. It is intended for a wide variety of medium power switching and linear applications. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MA |
| 2N6111 ON Semiconductor - Complementary Silicon Plastic Power Transistors 2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. Features High DC Current Gain High Current Gain Bandwidth Product TO 220 Compact Package These Devices are Pb Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector |
Related Information
| 2N60 N-CHANNEL MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe |
| 2N60-E N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Thi |
Related Part Number
2N5038 | 2N06L11 |2N5157 | 2N3440 |
2N4339 | 2N5038 |