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2N7000BU
N-Ch MOSFET 60V 200mA 400mW(Ta) 5Ω@500mA, 10V 3V@1mA 50pF@25V TO-92-3 TH 5.2mm × 4.19mm × 5.33mm
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Newark | 4,263 | Visit Site | |||
| Master Electronics | 6,000 | Visit Site | |||
| Onlinecomponents.com | 6,000 | Visit Site | |||
| Rochester Electronics | 25,850 | Visit Site | |||
| Verical | 5,524 | Visit Site | |||
| Arrow Electronics | 10,000 | 0.2966 | Visit Site | ||
| Mouser | 20,270 | 1.11 | Visit Site | ||
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File Download: 2N7000.PDF
[ Descriptions ]
| 2N7000 Motorola Inc - 60V, 200mA, N-channel MOSFET MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000, D TMOS FET Transistor N Channel Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage (RGS = 1.0 MΩ) Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above |
| 2N7000 NXP Semiconductors - 60V, 200mA, N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product speci cation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speci cation N-channel enhancement mode vertical D-MOS transistor FEATURES Low RDS(on) Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION N-channel |
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| 2N70-M N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics |
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