Semiconductor Informations

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| 2N7000 Motorola Inc - 60V, 200mA, N-channel MOSFET MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000, D TMOS FET Transistor N Channel Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage (RGS = 1.0 MΩ) Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above |
| 2N7000 NXP Semiconductors - 60V, 200mA, N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product speci cation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speci cation N-channel enhancement mode vertical D-MOS transistor FEATURES Low RDS(on) Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION N-channel |
| 2N70 N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. Thi |
| 2N70-M N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics |