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Search 2N7002 Datasheet (PDF)
Microchip
2N7002-G
Power Field-Effect Transistor, 0.25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Newark | 320 | 0.64 | Visit Site | ||
| Onlinecomponents.com | 3,000 | Visit Site | |||
| Master Electronics | 3,000 | Visit Site | |||
| Arrow Electronics | 2,829 | 0.4737 | Visit Site | ||
| TME | 2,511 | 0.608 | Visit Site | ||
| NAC Semi | 39,000 | Visit Site | |||
| Microchip | 12,835 | 0.64 | Visit Site | ||
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File Download: 2N7002.PDF
[ Descriptions ]
| 2N7002 Pan Jit International Inc. - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switching. Rugged and |
| 2N7002 NXP Semiconductors - N-channel Trench MOSFET DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product speci cation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speci cation N-channel vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a |
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| 2N70-M N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics |
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