Semiconductor Informations
| 2N7002 Pan Jit International Inc. - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts CURRENT 115 mAmp PACKAGE SOT-23 DESCRIPTION N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switching. Rugged and |
| 2N7002 NXP Semiconductors - N-channel Trench MOSFET DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product speci cation File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product speci cation N-channel vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a |
| 2N70 N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. Thi |
| 2N70-M N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics |
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