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Search 2N7002DW Datasheet (PDF)
Datasheet| Distributor | Stock | 1 | Link | ||
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| Newark | 166,579 | Visit Site | |||
| Future Electronics | 1,545,000 | Visit Site | |||
| TME | 5,223 | 0.3101 | Visit Site | ||
| Conrad | 40 | 0.02 | Visit Site | ||
| Weyland Electronics Group Pte. Ltd. | 30,000 | 0.08 | Visit Site | ||
| Win Source | 990,000 | Visit Site | |||
| YIC International | 36,315 | 0.0904 | Visit Site | ||
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File Download: 2N7002DW.PDF
[ Descriptions ]
| 2N7002DW Diodes Incorporated - DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) 8Ω @ VGS = 5V 6Ω @ VGS = 10V Package SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features |
| 2N7002DW Weitron Technology - Dual N-Channel MOSFET 2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns 1 2 3 4 5 6 SOT-363(SC-88) Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208 *Weight: 0.006 grams |
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| 2N70-M N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics |
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