Semiconductor Informations

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| 2N7002KW Unisonic Technologies - N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N7002KW 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switc |
| 2N7002KW Fairchild Semiconductor - N-Channel Enhancement Mode Field Effect Transistor 2N7002KW N-Channel Enhancement Mode Field Effect Transistor May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input, Output Leakage Ultra-Small Surface Mount Package Pb Free, RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S G SO |
| 2N70 N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. Thi |
| 2N70-M N-CHANNEL POWER MOSFET - Unisonic Technologies UNISONIC TECHNOLOGIES CO., LTD 2N70-M Preliminary 2 Amps, 700 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics |