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2N7002LT1G
Mosfet; N-ch; Vdss 60VDC; Rds(on) 7.5 Ohms; Id +/-115MA; SOT-23 (TO-236); Pd 225MW; -55
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File Download: 2N7002LT1.PDF
[ Descriptions ]
| 2N7002LT1 Motorola Inc - CASE 318-08/ STYLE 21 SOT-23 (TO-236AB) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7002LT1, D TMOS FET Transistor N Channel Enhancement 3 DRAIN 1 GATE 2N7002LT1 Motorola Preferred Device 3 2 SOURCE MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage (RGS = 1.0 MΩ) Drain Current Continuous TC = 25°C(1) Drain Current Continuous TC = 100°C(1) Drain Current Pulsed(2) Gate Source Voltage Continuo |
| 2N7002LT1 TRSYS - N-CHANNEL ENHANCEMENT |
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