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2N7002P,215
Transistor: N-MOSFET; unipolar; 60V; 360mA; 1.6ohm; 350mW; -55+150 deg.C; SMD; SOT23; AEC-Q100
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| Newark | 21,000 | Visit Site | |||
| Future Electronics | 213,000 | Visit Site | |||
| UnikeyIC | 108,307 | 0.0125 | Visit Site | ||
| Arrow Electronics | 888,000 | Visit Site | |||
| Verical | 888,000 | Visit Site | |||
| TME | 100,294 | 0.16 | Visit Site | ||
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[ Descriptions ]
| 2N7002P NXP Semiconductors - 360mA N-channel Trench MOSFET 2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Logic-level compatible Trench MOSFET technology Very fast |
| 2N7002PW NXP Semiconductors - MOSFET ( Transistor ) 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Logic-level compatible Trench MOSFET technology Very f |
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